Hall effect, thermoelectric power and electrical conductivity measurements in vitreous CdGexAs2

R. Callaerts, M. Denayer, F. Hashmi, P. Nagels
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引用次数: 21

Abstract

A series of measurements of Hall effect, thermoelectric power and electrical conductivity have been performed on the vitreous CdGexAs2 having a Ge content of 0.2, 0.3, 0.4, 0.6 and 1 mol respectively. The electrical conductivity has an exponential behaviour in the temperature range 185–500 K only for the 0.6 and 1 mol composition. It deviates from the exponential behaviour at lower temperatures for the 0.2, 0.3 and 0.4 compositions. The thermoelectric power is positive for CdGe0.2As2, negative for CdGe0.6As2 and CdGe1.0As2, whereas it changes sign for CdGe0.3As2 and CdGe0.4As2. The Hall coefficient is negative for alll compositions except for the CdGe1.0As2. The Hall mobilities differ widely for the different compositions and have the values of 1.5 × 10–2 to 1.3 × 10–1 cm2 V–1 s–1 at room temperature.
玻璃体cdgeexas2中霍尔效应、热电功率和电导率的测量
对锗含量分别为0.2、0.3、0.4、0.6和1 mol的玻璃体cdgeexas2进行了霍尔效应、热电功率和电导率的测量。仅在0.6 mol和1 mol的组分中,电导率在185-500 K的温度范围内呈指数行为。对于0.2、0.3和0.4组分,它在较低温度下偏离指数行为。CdGe0.2As2的热电功率为正,CdGe0.6As2和CdGe1.0As2的热电功率为负,而CdGe0.3As2和CdGe0.4As2的热电功率变化符号。除了CdGe1.0As2外,其余成分的霍尔系数均为负。不同成分的霍尔迁移率差异很大,室温下的霍尔迁移率为1.5 × 10-2至1.3 × 10-1 cm2 V-1 s-1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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