Effects of composition fraction on subthreshold behavior of InAsxSb(1-x) channel UTB MOSFETs

S. Dey, B. Dey, S. Bhattacherjee
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Abstract

In this paper, we report for the first time the effect of composition fraction on the subthreshold behaviour for an n- channel InAsxSb1-x UTB MOSFET in nanoscale regime. Our model is based on numerical simulation technique using ATLAS, the 2-D device simulator. We have used ATLAS to obtain the drain current ID, transconductance gM, threshold voltage and subthreshold slope taking into account the effect of composition fraction (x). The drain current model is calibrated with reported experimental data. The transfer characteristic curves are utilized to find the threshold voltage and subthreshold slope as a function of composition fraction of InAsxSb1-x channel UTB MOSFETS. Our investigation reveals that composition fraction has a strong impact on the drain current and transconductance in subthreshold and weak inversion region. ON - OFF current ratio as well as subthreshold slope can be improved by changing the composition fraction of InAsxSb1-x alloy. Also threshold voltage can be shifted by changing the same.
组成分数对InAsxSb(1-x)通道UTB mosfet亚阈值行为的影响
在本文中,我们首次报道了组成分数对纳米尺度下n沟道inasxs11 -x UTB MOSFET亚阈值行为的影响。我们的模型是基于二维设备模拟器ATLAS的数值模拟技术。考虑到组分分数(x)的影响,我们使用ATLAS获得了漏极电流ID、跨导gM、阈值电压和亚阈值斜率。漏极电流模型使用报告的实验数据进行了校准。利用转移特性曲线求出InAsxSb1-x通道UTB mosfet的阈值电压和亚阈值斜率随组成分数的函数关系。我们的研究表明,成分分数对亚阈值区和弱反转区漏极电流和跨导有很大的影响。通过改变InAsxSb1-x合金的成分分数,可以提高开关电流比和亚阈值斜率。同样,阈值电压也可以通过改变而移位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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