Study and Analysis of Noise in CMOS Circuit Design using C5 model process technology

Ayoush Johari, Soni Changlani
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Abstract

Noise behavior in microelectronic devices is mainly contributed by shot noise, thermal noise and flicker noises, avalanche noise and burst noises etc. Other factors that constitute to noise are various generation and recombination procedures, power lines and scaling technology associated in CMOS designs. Thermal noise or noise due to thermal agitations with flicker noise are the primary noise sources in scalable MOSFET circuit designs however there are many more sources of noise. This paper analyzes how input referred noise sources are summed up to a CMOS design model to calculate output noise. The noise temperature and its impact on performance of a CMOS design will also be in consideration along with characterization of input and output noises.
基于C5模型工艺技术的CMOS电路设计噪声研究与分析
微电子器件中的噪声行为主要由弹射噪声、热噪声和闪烁噪声、雪崩噪声和突发噪声等构成。构成噪声的其他因素是CMOS设计中相关的各种产生和重组程序,电力线和缩放技术。热噪声或由闪烁噪声引起的热振荡噪声是可扩展MOSFET电路设计中的主要噪声源,但是还有更多的噪声源。本文分析了如何将输入参考噪声源归结为CMOS设计模型来计算输出噪声。噪声温度及其对CMOS设计性能的影响也将与输入和输出噪声的特性一起考虑。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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