Nonuniform 2D Mott-Gurney law

Abstract

For high charge injection into a solid dielectric, the 1D current density is described by the classical Mott-Gurney (MG) law for trap-free solid and Mark-Helfrich (HF) law for trap-filled solid. Recently, due to the development of nanotechnology, the geometry current enhancement is observed in many experiment, such as electron transport in nanowire. In this paper, we develop a numerical method to solved the 2D space charge limited current problem.