Role of short-range order in producing an energy gap in amorphous covalent semiconductors

J. Klima, T. C. Mcgill, J. Ziman
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引用次数: 11

Abstract

The role of short-range order in determining the density of states of disordered covalent semiconductors is investigated using the multiple scattering formalism. Detailed calculations of an approximate density of states for a model consisting of clusters of carbon atoms in configurations found in amorphous and crystalline germanium are reported. These calculations suggest that the energy gap in amorphous covalent semi-conductors is a result of the short-range order.
非晶共价半导体中短距离有序在产生能隙中的作用
利用多重散射的形式,研究了短程有序在确定无序共价半导体态密度中的作用。详细计算了一个由碳原子团簇组成的模型的近似态密度,在非晶锗和结晶锗中发现了构型。这些计算表明,非晶共价半导体中的能隙是短程有序的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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