Fabrication of integrated THz sources

Abstract

Fabrication methods for integrated, GaAs-on-Quartz, Schottky based sideband generators and frequency multipliers operating at 200 GHz and 600 GHz are discussed. Important attributes include sub-micron anodes, air-bridged Schottky contacts, epitaxial layer bonding, low temperature (<200/spl deg/C) processing, and quasi-ohmic contacts. Photos of completed circuits and test results are presented.