Novel Ni germanide technology with co-sputtering of Ni and Pt for thermally stable Ge MOSFETs on Ge-on-Si substrate

Abstract

Co-sputtering of Ni and Pt was proposed for thermal stable Ge MOSFETs on a Ge-on-Si substrate. The thermal stability of Ni germanide was considerably improved compared to the pure Ni germanide by the co-sputtering of Pt along with Ni, because Pt atoms distributed uniformly in the Ni germanide layer, which suppressed the agglomeration of Ni germanide. Therefore, the proposed Ni-Pt co-sputtering method is promising for high performance Ge MOSFET applications.