Amplification of external radiation in a semiconductor laser in the lasing state

K. B. Dedushenko, M. V. Zverkov, A. Mamaev
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Abstract

Equations are derived to describe a semiconductor laser with injection of external radiation. The case of small signal amplification is analyzed in detail. It is shown that the transmission spectrum of a laser in the lasing state has side maxima separated from the natural resonance by several gigahertz. The results of an experimental study of this phenomenon are presented. A satisfactory agreement between the theoretical and experimental results is demonstrated.
半导体激光器在激光状态下的外辐射放大
导出了外辐射注入半导体激光器的方程。详细分析了小信号放大的情况。结果表明,激光在激光状态下的透射谱与自然共振的边最大值相差数ghz。本文给出了这一现象的实验研究结果。理论与实验结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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