Dielectric properties of nanocrystalline AlN with respect to its crystal chemistry

Abstract

The aim of this study was to find an optimum silicon carbide-based dielectric material for high-temperature electronic applications. The crystal–chemical criteria adopted in the selection of appropriate material were: a nanocrystalline structure, E_g≫3.5 eV, α∼3.5×10⁻⁶ 1/K. These criteria are fulfilled by aluminium nitride. Thin nano-aluminium nitride layers were deposited on single-crystal silicon carbide plates (n-type) by impulse plasma assisted CVD. The structure of the aluminium nitride layers and the electro–physical properties of the AlN–SiC junction were examined.