Finite Element Analysis of SAW Propagation Characteristics in c-plane (0001) and a-plane (11-20) AlScN Thin Films

N. Feil, N. Kurz, D. Urban, A. Altayara, B. Christian, A. Ding, A. Žukauskaitė, O. Ambacher
{"title":"Finite Element Analysis of SAW Propagation Characteristics in c-plane (0001) and a-plane (11-20) AlScN Thin Films","authors":"N. Feil, N. Kurz, D. Urban, A. Altayara, B. Christian, A. Ding, A. Žukauskaitė, O. Ambacher","doi":"10.1109/ULTSYM.2019.8925570","DOIUrl":null,"url":null,"abstract":"Al<inf>1−x</inf>Sc<inf>x</inf>N (AlScN) is known for its large elastic and piezoelectric constants and thus is a favorable material for applications in novel radio frequency (RF) components. We investigated a-plane AlScN on r-plane Al<inf>2</inf>O<inf>3</inf> (AlScN(11-20)/Al<inf>2</inf>O<inf>3</inf>(1-102)). The surface acoustic wave (SAW) propagation properties of AlScN(11-20)/Al<inf>2</inf>O<inf>3</inf>(1-102) and AlScN(11-20)/Al<inf>2</inf>O<inf>3</inf>(1-102) were analyzed using finite element method (FEM) simulations and the results were compared. Rayleigh-type and Sezawa-type wave modes were identified and the acoustic parameters such as phase velocity, electromechanical coupling coefficient, and reflectivity were evaluated. An increased effective coupling of 5.5 % was detected for Rayleigh-type waves on AlScN(11-20)/Al<inf>2</inf>O<inf>3</inf>(1-102). The Sezawa-type modes show an even higher coupling up to 6.2 %. Furthermore, we detected increased reflectivity of AlScN(11-20) films compared to c-plane AlScN(0001). Our results reveal the potential of using a-plane AlScN for increasing the electromechanical coupling, which is needed for the upcoming piezo-acoustic filter requirements.","PeriodicalId":6759,"journal":{"name":"2019 IEEE International Ultrasonics Symposium (IUS)","volume":"55 1","pages":"2588-2591"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Ultrasonics Symposium (IUS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2019.8925570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Al1−xScxN (AlScN) is known for its large elastic and piezoelectric constants and thus is a favorable material for applications in novel radio frequency (RF) components. We investigated a-plane AlScN on r-plane Al2O3 (AlScN(11-20)/Al2O3(1-102)). The surface acoustic wave (SAW) propagation properties of AlScN(11-20)/Al2O3(1-102) and AlScN(11-20)/Al2O3(1-102) were analyzed using finite element method (FEM) simulations and the results were compared. Rayleigh-type and Sezawa-type wave modes were identified and the acoustic parameters such as phase velocity, electromechanical coupling coefficient, and reflectivity were evaluated. An increased effective coupling of 5.5 % was detected for Rayleigh-type waves on AlScN(11-20)/Al2O3(1-102). The Sezawa-type modes show an even higher coupling up to 6.2 %. Furthermore, we detected increased reflectivity of AlScN(11-20) films compared to c-plane AlScN(0001). Our results reveal the potential of using a-plane AlScN for increasing the electromechanical coupling, which is needed for the upcoming piezo-acoustic filter requirements.
SAW在c面(0001)和a面(11-20)AlScN薄膜中传播特性的有限元分析
Al1−xScxN (AlScN)以其大的弹性和压电常数而闻名,因此是新型射频(RF)元件应用的有利材料。我们研究了a-平面AlScN在r-平面Al2O3上(AlScN(11-20)/Al2O3(1-102))。采用有限元模拟方法对AlScN(11-20)/Al2O3(1-102)和AlScN(11-20)/Al2O3(1-102)的表面声波(SAW)传播特性进行了分析,并对结果进行了比较。识别了瑞利型和sezawa型波模,评估了相速度、机电耦合系数和反射率等声学参数。在AlScN(11-20)/Al2O3(1-102)上检测到瑞利型波增加了5.5%的有效耦合。sezawa型模式显示出更高的耦合,高达6.2%。此外,我们检测到AlScN(11-20)薄膜的反射率比c平面AlScN(0001)增加。我们的研究结果揭示了使用平面AlScN增加机电耦合的潜力,这是即将到来的压电声滤波器要求所需要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信