Electrical behavior of nanocrystalline graphite/p-Si Schottky diode

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI:10.1109/NANO.2016.7751379

S. M. Sultan, S. H. Pu, S. Fishlock, L. H. Wah, H. Chong, J. McBride

引用次数: 6

Abstract

The electrical characteristics of nanocrystalline graphite (NCG) on p-type Si Schottky diodes were investigated. The NCG/p-Si Schottky diodes were fabricated on a 6-inch wafer by metal-free catalyst plasma enhanced chemical vapour deposition (PECVD) and photolithography pattern transfer method. The NCG film consists of nanoscale grains of ~35 nm in size. The NCG/p-Si Schottky diode shows rectifying behavior with Schottky barrier height of 0.58 eV. This result in addition to nanosized grains can be exploited towards various chemical and gas sensor applications.

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纳米晶石墨/p-Si肖特基二极管的电学行为

研究了纳米晶石墨(NCG)在p型硅肖特基二极管上的电特性。采用无金属催化等离子体增强化学气相沉积(PECVD)和光刻模式转移方法在6英寸晶圆上制备了NCG/p-Si肖特基二极管。NCG薄膜由~35 nm大小的纳米级颗粒组成。NCG/p-Si肖特基二极管具有整流特性，肖特基势垒高度为0.58 eV。这一结果除了纳米颗粒外，还可以用于各种化学和气体传感器应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

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