Design and fabrication of micro hot-wire flow sensor using 0.35μm CMOS MEMS technology

Z. Miao, C. Chao, Y. Chiu, Chia-Wei Lin, Yi-Kuen Lee
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引用次数: 9

Abstract

MEMS sensors are promising for Energy Efficient Building (EeB) because of the potential low cost and low power consumption. Various flow sensors based on MEMS technology have been fabricated. In this work, we designed and fabricated a polysilicon micro hot-wire flow sensor using a commercial 0.35μm 2P4M CMOS technology followed by post-CMOS processing. A post-CMOS MEMS process for a 1.5mm×1.5mm sensor chip using Deep Reactive Ion Etch (DRIE) and spray coating was utilized to finish the fabrication. The fabricated flow sensor was characterized at different flow rates. The fabricated sensor with a dimension of 300μm×2μm×3.76μm demonstrated a sensitivity of 23.87 mV/(m/s) and power consumption of 0.79 mW at Uin =5m/s. The experiment results were consistent with the theoretical prediction and the best results showed an average error of only 5%.
基于0.35μm CMOS MEMS技术的微型热线流量传感器的设计与制造
MEMS传感器因其潜在的低成本和低功耗而在节能建筑(EeB)中具有广阔的应用前景。各种基于MEMS技术的流量传感器已经被制造出来。本研究采用商用0.35μm 2P4M CMOS工艺设计并制作了多晶硅微热线流量传感器,并进行了后处理。采用后cmos MEMS工艺,采用深度反应离子蚀刻(Deep Reactive Ion Etch, DRIE)和喷涂工艺完成了1.5mm×1.5mm传感器芯片的制备。对所制备的流量传感器在不同流量下进行了表征。该传感器尺寸为300μm×2μm×3.76μm,在Uin =5m/s时灵敏度为23.87 mV/(m/s),功耗为0.79 mW。实验结果与理论预测一致,最佳结果平均误差仅为5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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