The CLICTD Monolithic CMOS Sensor

K. Dort
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引用次数: 2

Abstract

CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 microns are demanded. In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 microns to minimize the material budget) and inclined particle tracks.
CLICTD单片CMOS传感器
CLICTD是采用改进的180 nm CMOS成像工艺制造的单片硅像素传感器,具有小型收集电极设计和高电阻率外延层。它具有创新的亚像素分割方案,并针对快速充电和高空间分辨率进行了优化。该传感器是针对提出的未来紧凑型直线对撞机(CLIC)跟踪探测器的要求而开发的。最值得注意的是,需要几纳秒的时间分辨率和低于7微米的空间分辨率。在这篇文章中,介绍了在光束测试中测量的传感器性能,重点介绍了最近使用不同厚度(低至50微米,以尽量减少材料预算)和倾斜粒子轨迹的组件的研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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