{"title":"Diffusion Model of Aluminium for the Formation of a Deep Junction in Silicon","authors":"J. Chae","doi":"10.4313/JKEM.2020.33.4.263","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4313/JKEM.2020.33.4.263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}