Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-01-01 DOI:10.1109/ICIMW.2004.1422186

H. Nakata, A. Yokoyama, T. Hatou, T. Ohyama, N. Tsubouchi, S. Pavlov, H. W. Heubers

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Abstract

We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.

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Si:P太赫兹激光的激发光谱与Ge:Te中的红外光导

研究了自由电子激光(FEL)和CO/sub / 2激光激发Si:P的Ge:Te和THz激光的红外光导率。在约120 meV范围内，随光子能量的增加，发射强度减小。Ge:Te的光导光谱具有LO声子结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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