Long-Wavelength Infrared Digital Focal Plane Arrays for Earth Remote Sensing Applications

S. Gunapala, C. Hill, A. D'Souza, C. Masterjohn, S. Babu, P. Ghuman, Sir Rafol, D. Ting, A. Soibel, A. Khoshakhlagh, S. Keo, B. Pepper, A. Fisher, E. Luong
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Abstract

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II strained-layer superlattice (T2SLS) based infrared photodetectors using the barrier infrared detector (BIRD) device architecture. The recent emergence of barrier infrared detectors such as the nBn [1] and the XBn [2] have resulted in mid-wave infrared (MWIR) and long-wave infrared (LWIR) detectors with substantially higher operating temperatures than previously available in III-V semiconductor based MWIR and LWIR detectors. The initial nBn devices used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2 µm and ~4 µm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5 µm) MWIR atmospheric transmission window. There also have been nBn detectors based on the InAs/GaSb type-II superlattice absorber [3] .
长波红外数字焦平面阵列在地球遥感中的应用
在本报告中,我们将报告我们最近在使用屏障红外探测器(BIRD)器件架构实现基于Antimonides ii型应变层超晶格(T2SLS)的红外光电探测器的高性能方面所做的努力。最近出现的屏障红外探测器,如nBn[1]和XBn[2],导致了中波红外(MWIR)和长波红外(LWIR)探测器,其工作温度比以前在III-V半导体基础上的MWIR和LWIR探测器高得多。初始nBn器件采用生长在InAs衬底上的InAs吸收体,或生长在GaSb衬底上的晶格匹配的InAsSb合金,截止波长分别为~3.2µm和~4µm。虽然这些探测器可以在比现有的基于InSb的MWIR探测器更高的温度下工作,但它们的光谱响应不能覆盖整个(3 - 5.5 μ m) MWIR大气透射窗口。也有基于InAs/GaSb ii型超晶格吸收剂的nBn探测器[3]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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