S. Gunapala, C. Hill, A. D'Souza, C. Masterjohn, S. Babu, P. Ghuman, Sir Rafol, D. Ting, A. Soibel, A. Khoshakhlagh, S. Keo, B. Pepper, A. Fisher, E. Luong
{"title":"Long-Wavelength Infrared Digital Focal Plane Arrays for Earth Remote Sensing Applications","authors":"S. Gunapala, C. Hill, A. D'Souza, C. Masterjohn, S. Babu, P. Ghuman, Sir Rafol, D. Ting, A. Soibel, A. Khoshakhlagh, S. Keo, B. Pepper, A. Fisher, E. Luong","doi":"10.1109/IGARSS.2019.8900531","DOIUrl":null,"url":null,"abstract":"In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II strained-layer superlattice (T2SLS) based infrared photodetectors using the barrier infrared detector (BIRD) device architecture. The recent emergence of barrier infrared detectors such as the nBn [1] and the XBn [2] have resulted in mid-wave infrared (MWIR) and long-wave infrared (LWIR) detectors with substantially higher operating temperatures than previously available in III-V semiconductor based MWIR and LWIR detectors. The initial nBn devices used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2 µm and ~4 µm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5 µm) MWIR atmospheric transmission window. There also have been nBn detectors based on the InAs/GaSb type-II superlattice absorber [3] .","PeriodicalId":13262,"journal":{"name":"IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium","volume":"197 1","pages":"8856-8859"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IGARSS.2019.8900531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II strained-layer superlattice (T2SLS) based infrared photodetectors using the barrier infrared detector (BIRD) device architecture. The recent emergence of barrier infrared detectors such as the nBn [1] and the XBn [2] have resulted in mid-wave infrared (MWIR) and long-wave infrared (LWIR) detectors with substantially higher operating temperatures than previously available in III-V semiconductor based MWIR and LWIR detectors. The initial nBn devices used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2 µm and ~4 µm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5 µm) MWIR atmospheric transmission window. There also have been nBn detectors based on the InAs/GaSb type-II superlattice absorber [3] .