Development of Confined Plasma Source for Hazardous Gas Treatment

Y. Yoon
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Abstract

Since the process gas that is essential in the semiconductor process is a harmful gas, it is an essential task to solve it in an environmentally friendly manner. Currently, the cleaning technology used in the semiconductor process is mostly a wet cleaning based on hydrogen peroxide developed in the 1970s, and the SC-1 cleaning liquid for removing particles on the surface uses a mixture of ammonia and hydrogen peroxide. Therefore, environmental problems are caused, and economic problems caused by excessive water use are also serious. For this reason, the products developed through this study are used to decompose the process harmful gas from the chamber outlet into a harmless gas before entering the vacuum pump, or by incineration and the gaseous components are deposited on the pump. I want to solve the problem. In this paper, CPS (Confined Plasma Source) is proposed to save environment and improve productivity by replacing harmful gases (N2, CF4, SF6...., Etc) which are indispensable in semi-contamination process with innocuous gases or incineration with plasma, to study.
用于危险气体处理的密闭等离子体源的研制
由于半导体工艺中必不可少的工艺气体是有害气体,因此以环境友好的方式解决它是必不可少的任务。目前,半导体工艺中使用的清洗技术多为20世纪70年代发展起来的以双氧水为基础的湿式清洗,SC-1清洗液用于去除表面颗粒,使用的是氨和双氧水的混合物。因此,造成了环境问题,过度用水造成的经济问题也很严重。因此,通过本研究开发的产品用于将工艺有害气体从腔室出口分解为无害气体,然后进入真空泵,或者通过焚烧,将气体成分沉积在泵上。我想解决这个问题。本文提出了CPS(密闭等离子体源),通过替代有害气体(N2、CF4、SF6....)来节约环境和提高生产率,等),这是在半污染过程中不可缺少的与无害气体或焚烧等离子体。
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