ZnO films obtained by electrodeposition under alternating magnetic field

B. Altıokka, A. Yıldırım
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Abstract

Thin films of polycrystalline ZnO were produced by electrodeposition under alternating magnetic field. The structures of the films deposited under a magnetic field were defined by X-ray diffractometer (XRD) and it revealed that the films formed in a hexagonal structure. The energy gaps of the films produced without magnetic field were estimated between 3.54 eV and 3.63 eV while the others varied from the 3.60 eV to the 3.79 eV.
交变磁场下电沉积法制备ZnO薄膜
采用交变磁场下电沉积法制备了多晶ZnO薄膜。用x射线衍射仪(XRD)分析了薄膜在磁场作用下的结构,发现薄膜呈六边形结构。无磁场薄膜的能隙在3.54 ~ 3.63 eV之间,其余薄膜的能隙在3.60 ~ 3.79 eV之间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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