LEC-growth and characterization of n- and p-type Fe-doped InP

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147365

F. Mosel, A. Seidl, D. Hofmann, G. Muller

引用次数: 1

Abstract

The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor.<>

查看原文本刊更多论文

n型和p型掺铁InP的lec生长和表征

讨论了分别与Zn和Te共掺杂，采用液相包封法生长n型和p型Fe掺杂InP晶体。通过化学、电学和光学分析对掺杂剂的掺入进行了检验。通过霍尔效应测量和理论计算的比较，研究了InP:Fe,Zn晶体的电子输运性质，表明Zn原子被深层供体部分补偿。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

自引率

0.00%

发文量