Фазовые переходы в эпитаксиальных слоях карбида кремния, выращенных на кремниевой подложке методом согласованного замещения атомов

Abstract

Temperature dependences of the longitudinal resistance and heat capacity of silicon carbide epitaxial films grown on monocrystalline silicon substrates by the method of coordinated substitution of atoms are investigated. Peculiarities in the behavior of these dependences have been found at temperatures equal to 56°C, 76°C, 122°C and 130°C. The observed peculiarities of the behavior of heat capacity and longitudinal resistance, considering appearance of a giant value of diamagnetism previously discovered in the samples at these temperatures, are interpreted as phase transitions of charge carriers into a coherent (superconducting, if we consider diamagnetism) state.