{"title":"A 16-nm FinFET Power- and Phase Noise-Scalable DCO using On-Chip Tapped Inductor","authors":"E. Hager, S. Broussev, H. Pretl","doi":"10.1109/Austrochip.2019.00022","DOIUrl":null,"url":null,"abstract":"In this paper a Digitally-Controlled Oscillator (DCO) with configurable power consumption and phase-noise is presented. The DCO provides two different power/phase-noise modes while maintaining an almost constant figure-of-merit (FoM) by using a tapped inductor in the LC tank. For each mode (low-power and low-noise mode) a different DCO core is selected, which either connects to the outer taps of the tank inductor or to the inner ones. The presented design achieves a tuning range of 25.9 % with a center frequency of 4.88 GHz at a FoM of approximately 185 dBc/Hz. The DCO concept is simulated in a 16 nm FinFET CMOS process.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"111 1","pages":"59-64"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Austrochip Workshop on Microelectronics (Austrochip)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/Austrochip.2019.00022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper a Digitally-Controlled Oscillator (DCO) with configurable power consumption and phase-noise is presented. The DCO provides two different power/phase-noise modes while maintaining an almost constant figure-of-merit (FoM) by using a tapped inductor in the LC tank. For each mode (low-power and low-noise mode) a different DCO core is selected, which either connects to the outer taps of the tank inductor or to the inner ones. The presented design achieves a tuning range of 25.9 % with a center frequency of 4.88 GHz at a FoM of approximately 185 dBc/Hz. The DCO concept is simulated in a 16 nm FinFET CMOS process.