Daewoong Lee, Hye-Jung Kwon, Daehyun Kwon, Jaehyeok Baek, C. Cho, Sanghoon Kim, Donggun An, C. Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Ju Kim, Ho-Seok Seol, Juhwan Kim, Junabum Shin, Kil Y. Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, T. Park, C. Oh, H. Ban, Hyungjong Ko, H. Song, T. Oh, Sang-Jun Hwang, Kyungseob Oh, J. Choi, Jooyoung Lee
{"title":"A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus","authors":"Daewoong Lee, Hye-Jung Kwon, Daehyun Kwon, Jaehyeok Baek, C. Cho, Sanghoon Kim, Donggun An, C. Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Ju Kim, Ho-Seok Seol, Juhwan Kim, Junabum Shin, Kil Y. Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, T. Park, C. Oh, H. Ban, Hyungjong Ko, H. Song, T. Oh, Sang-Jun Hwang, Kyungseob Oh, J. Choi, Jooyoung Lee","doi":"10.1109/ISSCC42614.2022.9731614","DOIUrl":null,"url":null,"abstract":"Graphic DRAMs have been developed to increase maximum I/O interface speeds to satisfy the demand of high-performance graphic applications [1]–[5]. Recently, PAM4 signaling was utilized to increase the I/O bandwidth up to 22Gb/s/pin [5]. However, the reduced voltage margin of PAM4, compared to NRZ, complicates circuit design; margins also become worse with a reduced power supply. This paper achieves 27Gb/s in NRZ, a 1.5× speed enhancement, by improving on previous GDDR6 [3]. A T-coil is designed, for the first time in a DRAM process, so that the maximum operation frequency is increased. The proposed merged-MUX TX increases the maximum speed and reduces power and area consumption. A quad-skew training technique enables a wider clock sampling margin for WCK: up to 3ps, which is 8.1% of 1UI at 27Gbp/s/pin. Furthermore, a dual-mode frequency divider allows a wide-range operation from sub-1Gb/s/pin to 27Gb/s/pin. An alternative-data-bus (ADB) is proposed to solve the frequency limit of the data bus.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"1 1","pages":"446-448"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC42614.2022.9731614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Graphic DRAMs have been developed to increase maximum I/O interface speeds to satisfy the demand of high-performance graphic applications [1]–[5]. Recently, PAM4 signaling was utilized to increase the I/O bandwidth up to 22Gb/s/pin [5]. However, the reduced voltage margin of PAM4, compared to NRZ, complicates circuit design; margins also become worse with a reduced power supply. This paper achieves 27Gb/s in NRZ, a 1.5× speed enhancement, by improving on previous GDDR6 [3]. A T-coil is designed, for the first time in a DRAM process, so that the maximum operation frequency is increased. The proposed merged-MUX TX increases the maximum speed and reduces power and area consumption. A quad-skew training technique enables a wider clock sampling margin for WCK: up to 3ps, which is 8.1% of 1UI at 27Gbp/s/pin. Furthermore, a dual-mode frequency divider allows a wide-range operation from sub-1Gb/s/pin to 27Gb/s/pin. An alternative-data-bus (ADB) is proposed to solve the frequency limit of the data bus.