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Characteristics of Ga2O3/4H-SiC Heterojunction Diode with Annealing Process

Journal of The Korean Institute of Electrical and Electronic Material Engineers Pub Date : 2020-01-01 DOI:10.4313/JKEM.2020.33.2.155
Young-Jae Lee, Koo, Sang-Mo
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退火工艺制备Ga2O3/4H-SiC异质结二极管的特性
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Journal of The Korean Institute of Electrical and Electronic Material Engineers
Journal of The Korean Institute of Electrical and Electronic Material Engineers
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