A 3-port MEMS switch for MEMS phase shifter application

Abstract

A 3-port MEMS switch for MEMS phase shifter is present, with bias electrodes physically insulated from RF/microwave transmission line, which are designed for lower crosstalk between bias and microwave signal. The RF/microwave performances of these switches are optimized by 2.5 dimension electromagnetic (EM) field-solvers of ADS/Momentum. The mechanical structure of the switch is optimized by electromechanical coupling analysis of Intellisuitereg software. The insert loss of the switch is 0.66dB@10GHz and the isolation is 23.26dB@10GHz. The delay of on-state is about 50mus (90% bias) and that of off-state is about 15mus (10% bias). The whole chip size of the switch is 800mum*1000mum which made the MEMS phase shifter much more compact