Enhancement of electric field by silicon pillars in low voltage carbon nanotube cold cathodes

2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2018-01-01 DOI:10.1109/EICONRUS.2018.8317508

V. Zhigalov, Aleksei Emelianov, V. Petukhov, A. Golishnikov, E. Kitsyuk

引用次数: 1

Abstract

New approach of combining carbon nanotubes (CNT) and Si pillars in field emission cathodes is shown. Horizontally aligned CNTs emit with low threshold voltage, while main field enhancement is produced by using sharp edges in Si pillars made by Bosch process. The electric field enhancement was simulated and current-voltage curves were obtained for CNT-Si pillars samples.

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硅柱对低温碳纳米管阴极电场的增强作用

提出了将碳纳米管(CNT)与硅柱结合用于场发射阴极的新方法。水平排列的碳纳米管以较低的阈值电压发射，而主要的场增强是通过使用博世工艺制造的硅柱的锋利边缘来实现的。模拟了电场增强，得到了碳纳米管-硅柱样品的电流-电压曲线。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)

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