Investigation of FDSOI and PDSOI MOSFET characteristics

Q4 Engineering

Journal of Electrical and Electronics Engineering Pub Date : 2019-11-11 DOI:10.1063/1.5133920

Huiyun Wei, S. H. Ruslan

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引用次数: 5

Abstract

Implementation of silicon on insulator (SOI) technology gives a great alternative to the miniaturization and reduction of short channel effects, allowing microelectronic evolution to proceed. This paper investigate the characteristics of n-channel partially depleted silicon on insulator (PDSOI) and fully depleted silicon on insulator (FDSOI) metal oxide semiconductor field effect transistor (MOSFET). Both transistors are investigated in terms of electrical characteristics which are the threshold voltage, leakage current and kink effect. Both PDSOI and FDSOI MOSFETs are simulated by using Silvaco TCAD tools. The SOI MOSFET structures are simulated in Silvaco Atlas 2-D numerical simulator. The threshold voltage and leakage current of PDSOI MOSFET with silicon film thickness of 0.2 µm are found to be 0.6357 V and 0.013 pA respectively. As for FDSOI MOSFET with silicon film thickness of 0.08 µm, the threshold voltage is 0.3642 V and leakage current of 0.034 pA. Additionally, the simulation result also shows that kink effect only presents in PDSOI MOSFET. After analysing the results, it can be concluded that FDSOI MOSFET has better performance than PDSOI MOSFET.Implementation of silicon on insulator (SOI) technology gives a great alternative to the miniaturization and reduction of short channel effects, allowing microelectronic evolution to proceed. This paper investigate the characteristics of n-channel partially depleted silicon on insulator (PDSOI) and fully depleted silicon on insulator (FDSOI) metal oxide semiconductor field effect transistor (MOSFET). Both transistors are investigated in terms of electrical characteristics which are the threshold voltage, leakage current and kink effect. Both PDSOI and FDSOI MOSFETs are simulated by using Silvaco TCAD tools. The SOI MOSFET structures are simulated in Silvaco Atlas 2-D numerical simulator. The threshold voltage and leakage current of PDSOI MOSFET with silicon film thickness of 0.2 µm are found to be 0.6357 V and 0.013 pA respectively. As for FDSOI MOSFET with silicon film thickness of 0.08 µm, the threshold voltage is 0.3642 V and leakage current of 0.034 pA. Additionally, the simulation result also shows t...

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FDSOI和PDSOI MOSFET特性研究

绝缘体上硅(SOI)技术的实现为小型化和减少短通道效应提供了一个很好的选择，使微电子技术的发展得以继续。本文研究了n沟道部分耗尽绝缘体上硅(PDSOI)和完全耗尽绝缘体上硅(FDSOI)金属氧化物半导体场效应晶体管(MOSFET)的特性。研究了这两种晶体管的电学特性，即阈值电压、漏电流和扭结效应。使用Silvaco TCAD工具对PDSOI和FDSOI mosfet进行了仿真。在Silvaco Atlas二维数值模拟器上对SOI MOSFET结构进行了仿真。当硅膜厚度为0.2µm时，PDSOI MOSFET的阈值电压为0.6357 V，漏电流为0.013 pA。对于硅膜厚度为0.08µm的FDSOI MOSFET，阈值电压为0.3642 V，漏电流为0.034 pA。此外，仿真结果还表明，扭结效应仅在PDSOI MOSFET中存在。通过对结果的分析，可以得出FDSOI MOSFET的性能优于PDSOI MOSFET。绝缘体上硅(SOI)技术的实现为小型化和减少短通道效应提供了一个很好的选择，使微电子技术的发展得以继续。本文研究了n沟道部分耗尽绝缘体上硅(PDSOI)和完全耗尽绝缘体上硅(FDSOI)金属氧化物半导体场效应晶体管(MOSFET)的特性。研究了这两种晶体管的电学特性，即阈值电压、漏电流和扭结效应。使用Silvaco TCAD工具对PDSOI和FDSOI mosfet进行了仿真。在Silvaco Atlas二维数值模拟器上对SOI MOSFET结构进行了仿真。当硅膜厚度为0.2µm时，PDSOI MOSFET的阈值电压为0.6357 V，漏电流为0.013 pA。对于硅膜厚度为0.08µm的FDSOI MOSFET，阈值电压为0.3642 V，漏电流为0.034 pA。此外，仿真结果也显示了…

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来源期刊

Journal of Electrical and Electronics Engineering Engineering-Electrical and Electronic Engineering

CiteScore

0.90

自引率

0.00%

发文量

审稿时长

16 weeks

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