Low-Temperature Direct Bonding of Diamond (100) Substrate on Si Wafer Under Atmospheric Conditions

T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi
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引用次数: 11

Abstract

Abstract Direct bonding of a diamond (100) substrate and a Si wafer was achieved at 250°C under atmospheric conditions. Prior to the bonding process, the diamond substrate was treated with H2SO4/H2O2 and NH3/H2O2 mixtures, whereas the Si wafer was irradiated using oxygen plasma. By applying the pressure during the annealing process, the substrates were entirely bonded, except for the contaminated areas. The bonded specimen was fractured when a shear force of 1.7 MPa was applied. The electron microscopic observation indicated that the diamond and Si substrates were atomically bonded through a 3-nm-thick SiO2 layer without significant loss of diamond crystallinity. The integration of diamond (100) substrates on an Si wafer would contribute to the fabrication of future diamond devices.
常压条件下金刚石(100)衬底在硅片上的低温直接键合
在250°C的大气条件下,实现了金刚石(100)衬底与硅晶片的直接键合。在结合之前,用H2SO4/H2O2和NH3/H2O2混合物对金刚石衬底进行处理,而硅晶片则用氧等离子体照射。通过在退火过程中施加压力,除了污染区域外,衬底完全结合。当施加1.7 MPa剪切力时,粘结试样发生断裂。电镜观察表明,金刚石和Si衬底通过3 nm厚的SiO2层原子结合,金刚石结晶度没有明显损失。在硅晶片上集成金刚石(100)衬底将有助于未来金刚石器件的制造。
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