Rapid characterization of extended defects in III–V/Si by electron channeling contrast imaging

Abstract

Electron channeling contrast imaging (ECCI) is a high-throughput technique for imaging extended defects in single crystals. While similar to transmission electron microscopy, ECCI is performed in a scanning electron microscope and requires little sample preparation. Here, we first show that ECCI can be used to characterize a variety of extended defects, including threading dislocations, misfit dislocations, and stacking faults, in heteroepitaxially grown samples of GaP on Si. Then, as a proof of concept, misfit dislocations are characterized across a 4" wafer of GaP/Si. Imaging over such a large area is a prime example of an application that would be difficult to perform by TEM, but can easily be performed by ECCI.