CMOS 0.18 µm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system

F. Kuo, C. Chang, K. Wen
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引用次数: 3

Abstract

This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.
CMOS 0.18µm标准工艺电容式MEMS高q振荡器,超低功耗TIA读出系统
本文提出了第一个单片超低功耗MEMS振荡器,它可以在兼容ASIC的标准CMOS工艺中制造,并与TIA电路单片集成。在标准制造工艺的严格设计约束下,它被设计为高Q值和适中的运动阻抗。高增益超低功耗维持TIA放大器电路与谐振器结构紧密集成在单个芯片上,用于低功耗32khz时钟生成。所提出的1.69μW MEMS振荡器可以单片嵌入到常见的SoC应用中,提供时钟源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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