A Low Power Low Inrush Current LDO with Different Techniques for PSR and Stability Improvement

Hazem H. Hammam, Mostafa A. Hosny, H. Omran, S. Ibrahim
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Abstract

One of the most popular power management regulators is the low drop-out voltage regulator (LDO). LDOs have different specifications such as the power supply rejection (PSR) over different frequencies, stability over different load ranges, inrush current spike flows through the input supply, and power consumption. In this work, we present a low power low inrush current LDO design with different techniques for PSR and stability improvement across different frequencies. The LDO presented in this work is a low-power and small area LDO but achieves a high PSR over a wide range of frequencies. The LDO is designed in 65 nm CMOS technology and achieves a PSR better than 80 dB up to 30 MHz for an output load current of 25 mA using an output load capacitor of 4 µF. The design can be used in capless/capped LDOs with wide load current ranges as high as 200 mA and load capacitor range from 1 nF to 12 µF with inrush current improvement by more than 2×. The presented LDO consumes a zero-load quiescent current of 10 µA and its area of 180 µm × 180 µm.
采用不同技术提高PSR和稳定性的低功率低涌流LDO
最流行的电源管理稳压器之一是低降电压稳压器(LDO)。ldo具有不同的规格,例如不同频率下的电源抑制(PSR)、不同负载范围内的稳定性、通过输入电源的涌流尖峰流以及功耗。在这项工作中,我们提出了一个低功率低浪涌电流的LDO设计,采用不同的技术来提高不同频率的PSR和稳定性。本工作中提出的LDO是一个低功耗和小面积的LDO,但在宽频率范围内实现了高PSR。LDO采用65 nm CMOS技术设计,在输出负载电流为25 mA时,使用4µF的输出负载电容,在30 MHz范围内实现了优于80 dB的PSR。该设计可用于负载电流范围高达200 mA的无帽/有帽ldo,负载电容范围从1 nF到12µF,浪涌电流改善超过2倍。该LDO的零负载静态电流为10µa,面积为180µm × 180µm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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