Dependence of Schottky Barrier Height on Metal Work Function

Abstract

The Schottky barrier diodes were fabricated on n‐Si (100) using gold and platinum having different work functions. Aluminum was deposited on one side of Si and annealed to make good ohmic contacts. The junction parameters like ideality factor and Schottky barrier height were calculated from the I‐V characteristics. It has been observed that the Schottky barrier height of our Schottky diodes shows a very weak dependence on the metal work function indicating the dominance of interface states which cause the Fermi level pinning.