Scalable threshold voltage model for deep-submicrometer MOSFET

Abstract

Considering effects of nonuniform doping profile in vertical and lateral directions of MOSFET and solving a quasi two-dimensional differential equation for the surface potential, we have proposed a new threshold voltage model. Our model predicts well an initial roll-up of the threshold voltage with decreasing channel lengths and reduction of it due to the reverse short-channel effects and the short-channel effects.