Exploration of Design Optimizations for STTMRAM as L1 Cache

Shubhangi Pandey, Venkatesh Tiruchirai Gopalakrishnan, Naresh Ramavath
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Abstract

With the advent of data-intensive workloads, much effort has been put forth in recent years in designing memory architectures capable of storing massive data and, at the same time, processing it with lower latency. Non Volatile Memory(NVM) has emerged as a promising technology in meeting this challenge as possible on-chip memories due to its very high density and low leakage powers. Compared to other NVMs, Spin Transfer Torque Magnetic RAM(STTMRAM) has better endurance, lower latency values, and desired asymmetricity in the read & write operations. It is of immense importance that the suitability of using STTMRAM as a Level 1 cache with different design optimization strategies is properly explored. In this paper, we study the power and execution time of the design strategies that optimize read & write latency, dynamic energy, and energy-delay product(EDP). We seek the opportunity to study the performance of these design optimizations against specific memory intense workloads. The first part of our study compares the performance improvement of these design optimizations against SRAM memories. In the second part, we explore regular cache features like block size and associativity variations. Our study reveals that write dynamic energy optimizations have very low static power dissipation; read/write latency optimizations have the best latency values but relatively poor static power dissipation values. Energy-delay product optimization is found to be an optimal solution. The design space exploration carried out offers insight into developing novel application-specific memory systems and motivates research in circuit-level optimizations for future architectures.
STTMRAM作为L1缓存的设计优化探索
随着数据密集型工作负载的出现,近年来人们在设计能够存储大量数据并同时以较低延迟处理数据的内存体系结构方面付出了很多努力。非易失性存储器(NVM)由于其极高的密度和低泄漏功率而成为一种有前途的芯片存储技术,以应对这一挑战。与其他nvm相比,自旋传递扭矩磁RAM(STTMRAM)具有更好的耐用性,更低的延迟值,并且在读写操作中具有理想的不对称性。适当地探索使用STTMRAM作为具有不同设计优化策略的一级缓存的适用性是非常重要的。在本文中,我们研究了优化读写延迟、动态能量和能量延迟积(EDP)的设计策略的功率和执行时间。我们寻找机会研究这些设计优化在特定内存密集型工作负载下的性能。我们研究的第一部分比较了这些设计优化与SRAM存储器的性能改进。在第二部分中,我们将探讨常规的缓存特性,如块大小和结合性变化。我们的研究表明,写入动态能量优化具有非常低的静态功耗;读/写延迟优化具有最佳延迟值,但相对较差的静态功耗值。发现能量延迟积优化是一个最优解。所进行的设计空间探索为开发新型特定应用的存储系统提供了见解,并激励了对未来架构的电路级优化的研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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