A 4-Channel 10-Gbps/ch CMOS VCSEL Array Driver with on-chip Charge Pumps

X. Huang, D. Gong, Q. Sun, C. Chen, D. Guo, S. Hou, G. Huang, S. Kulis, C. Liu, T. Liu, P. Moreira, A. S. Rodr'iguez, H. Sun, J. Troska, L. Xiao, L. Zhang, W. Zhang, J. Ye
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引用次数: 3

Abstract

We present the design and test results of a 4-channel 10-Gbps/ch Vertical-Cavity Surface-Emitting Laser array driver, the cpVLAD. With on-chip charge-pumps to extend the biasing headroom for the VCSELs needed for low temperature operation and mitigation of the radiation effects. The cpVLAD was fabricated in a 65-nm CMOS technology. The test results show that the cpVLAD is capable of driving VCSELs with forward bias voltages as high as 2.8 V from a 2.5 V power supply. The power consumption of the cpVLAD is 94 mW/ch.
带有片上电荷泵的4通道10gbps /ch CMOS VCSEL阵列驱动器
介绍了一种4通道10gbps /ch垂直腔面发射激光阵列驱动器的设计和测试结果。采用片上电荷泵,延长了低温运行所需的vcsel的偏置余量,并减轻了辐射效应。cpVLAD采用65纳米CMOS技术制备。测试结果表明,cpVLAD能够在2.5 V电源下驱动高达2.8 V的正向偏置电压的vcsel。cpVLAD的功耗为94 mW/ch。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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