A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching

IF 0.9 4区 物理与天体物理 Q4 PHYSICS, APPLIED
Shiying Zhang, Li Zhenhua, Qingjun Xu
{"title":"A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching","authors":"Shiying Zhang, Li Zhenhua, Qingjun Xu","doi":"10.1051/epjap/2020200289","DOIUrl":null,"url":null,"abstract":"Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":"174 1","pages":"30402"},"PeriodicalIF":0.9000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Physical Journal-applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1051/epjap/2020200289","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.
金属辅助化学蚀刻制备硅纳米线阵列的系统研究
采用金属辅助化学蚀刻技术,在AgNO3/HF溶液中制备了具有良好可控性和可重复性的排列均匀的硅纳米线阵列。采用扫描电子显微镜(SEM)、能量色散x射线(EDX)、高分辨率透射电子显微镜(HRTEM)和选择区域电子衍射(SAED)对硅表面形成的SiNWs进行了表征。结果表明,制备的SiNWs是完美的单晶,并且硅纳米线的轴向方向与[111]方向平行,与初始硅片相同。此外,通过一系列实验研究了溶液浓度、蚀刻时间、蚀刻温度等蚀刻条件对SiNWs的影响。并确定了SiNWs的最佳溶液浓度。讨论了硅纳米线和银枝晶的形成机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
1.90
自引率
10.00%
发文量
84
审稿时长
1.9 months
期刊介绍: EPJ AP an international journal devoted to the promotion of the recent progresses in all fields of applied physics. The articles published in EPJ AP span the whole spectrum of applied physics research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信