{"title":"Formation and transportation of intergranular and nodular fine-grained. beta. -SiC in reaction-sintered SiC","authors":"C. Lim, T. Iseki","doi":"10.1111/J.1551-2916.1988.TB00284.X","DOIUrl":null,"url":null,"abstract":"Quantitative characterization of the microstructure of reaction-sintered SiC bodies prepared under various conditions was performed experimentally to observe the formation and transportation of both intergranular fine-grained and nodular fine-grained {beta}-SiC. The results showed that, by lowering the sintering temperature (min. {approx} 1,420{degree}C), the quantity of {beta}-SiC increased progressively from the outside of the specimen toward its center. However, the {beta}-SiC was almost completely transported onto the larger grain through liquid Si at 1,600{degree}C under vacuum. It was concluded that the formation of the fine-grained {beta}-SiC was due to the higher degree of supersaturation in the lower temperature outer region of the specimen.","PeriodicalId":7260,"journal":{"name":"Advanced Ceramic Materials","volume":"125 1","pages":"590-594"},"PeriodicalIF":0.0000,"publicationDate":"1988-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Ceramic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1111/J.1551-2916.1988.TB00284.X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
Quantitative characterization of the microstructure of reaction-sintered SiC bodies prepared under various conditions was performed experimentally to observe the formation and transportation of both intergranular fine-grained and nodular fine-grained {beta}-SiC. The results showed that, by lowering the sintering temperature (min. {approx} 1,420{degree}C), the quantity of {beta}-SiC increased progressively from the outside of the specimen toward its center. However, the {beta}-SiC was almost completely transported onto the larger grain through liquid Si at 1,600{degree}C under vacuum. It was concluded that the formation of the fine-grained {beta}-SiC was due to the higher degree of supersaturation in the lower temperature outer region of the specimen.