Highly oriented La doped (K, Na)NbO3 ferroelectric thin films

Abstract

Lead-free (K_0.5Na_0.5)_1-3xLa_xNbO₃ (x = 0.0-0.005) thin films were synthesized by chemical solution deposition. The X-ray analysis showed that (K_0.5Na_0.5)NbO₃ (KNN) and La doped KNN single-phase thin films were obtained with a [100] preferred orientation. When doping with La, thin films exhibited a remarkably low leakage current and higher dielectric properties.