Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties

Abstract

We suggest a method of growing silicon carbide crystal layers on carbon foil. The material is produced by moving a carbon foil tape at a speed up to 2.5 m/min in dynamic vacuum against a graphite capillary feeder that contains molten silicon. As a result of various chemical vapor reactions, SiC crystals grow at a speed up to 1.5 mm/s. The crystals and the foil form a composite material with semiconducting properties. In this article, we have discussed relevant patents.