Applying the Two-Port Lumped-Network FDTD Method to Modeling Linear Field-Effect Transistors with Nonzero Transconductance Delay Parameter

Abstract

The two-port lumped-network FDTD (TP-LN-FDTD) method has been applied to modeling field effect transistors (FETs) with nonzero transconductance delay parameter. To this end, the exponential factor associated with phase delay in the current generator is approximated by a rational function. The validity of this approach has been demonstrated by computing the scattering parameters of a microwave heterojunction FET (HJ-FET) amplifier