Fast chemistry in ion wakes

T.A. Tombrello
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引用次数: 24

Abstract

The energy loss of an MeV/amu ion to the electrons of a substance can be as great as keV/Å. With such an enormous amount of energy available, it is not surprising that a wide variety of phenomena can occur. Among them are track formation and induced desorption of molecular ions. A common ingredient in models of such processes is the requirement that the electronic excitation has a sufficiently long lifetime (∼ picoseconds) that energy can be transferred to atomic motion. Recently, several new phenomena have been observed that indicate that atomic motion/chemical rearrangement can occur even when the electronic excitation is shorter lived (∼ femtoseconds). Two of these processes, which are also induced by MeV ion bombardment, are track damage in heavily doped compound semiconductors and greatly enhanced adhesion of metal films to metallic and semiconducting substrates. Neither of these effects can be easily accomodated within the existing theoretical models; thus, it is possible that an even richer variety of ion induced effects will be discovered. Speculations on the form of a new theoretical approach are presented.

离子尾迹中的快速化学反应
MeV/amu离子对物质电子的能量损失可高达keV/Å。有了如此巨大的能量,各种各样的现象会发生也就不足为奇了。其中包括轨道的形成和诱导分子离子的脱附。这类过程模型的一个共同组成部分是要求电子激发具有足够长的寿命(~皮秒),以便能量可以转移到原子运动中。最近,已经观察到一些新的现象,表明即使电子激发的寿命较短(~飞秒),原子运动/化学重排也可能发生。其中两种过程也是由MeV离子轰击引起的,即重掺杂化合物半导体中的磁道损伤和金属薄膜与金属和半导体衬底的附着力大大增强。这两种效应都不能轻易地用现有的理论模型来解释;因此,有可能发现种类更丰富的离子诱导效应。对一种新的理论方法的形式进行了推测。
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