A 4.5-mW 8-b 750-MS/s 2-b/step asynchronous subranged SAR ADC in 28-nm CMOS technology

Yuanching Lien
{"title":"A 4.5-mW 8-b 750-MS/s 2-b/step asynchronous subranged SAR ADC in 28-nm CMOS technology","authors":"Yuanching Lien","doi":"10.1109/VLSIC.2012.6243803","DOIUrl":null,"url":null,"abstract":"A 8-b 2-b/step asynchronous subranged SAR ADC is presented. It incorporates subranging technique to obtain fast reference settling for MSB conversion. The capacitive interpolation reduces number of NMOS switches and lowers matching requirement of a resistive DAC. The proposed timing scheme avoids the need of specific duty cycle of external clock for defining sampling period in a conventional asynchronous SAR ADC. Operating at 750 MS/s, this ADC consumes 4.5 mW from 1-V supply, achieves ENOB of 7.2 and FOM of 41 fJ/conversion-step. It is fabricated in 28-nm CMOS technology and occupies an active area of 0.004 mm2.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"12 1","pages":"88-89"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"74","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Circuits (VLSIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2012.6243803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 74

Abstract

A 8-b 2-b/step asynchronous subranged SAR ADC is presented. It incorporates subranging technique to obtain fast reference settling for MSB conversion. The capacitive interpolation reduces number of NMOS switches and lowers matching requirement of a resistive DAC. The proposed timing scheme avoids the need of specific duty cycle of external clock for defining sampling period in a conventional asynchronous SAR ADC. Operating at 750 MS/s, this ADC consumes 4.5 mW from 1-V supply, achieves ENOB of 7.2 and FOM of 41 fJ/conversion-step. It is fabricated in 28-nm CMOS technology and occupies an active area of 0.004 mm2.
采用28纳米CMOS技术的4.5 mw 8-b 750-MS/s 2-b/步异步分段SAR ADC
提出了一种8-b 2-b/步异步分插式SAR ADC。该方法采用了分段技术,实现了MSB转换的快速基准沉降。电容式插补减少了NMOS开关的数量,降低了电阻式DAC的匹配要求。该定时方案避免了在传统异步SAR ADC中需要外部时钟的特定占空比来定义采样周期。该ADC工作速度为750ms /s,从1v电源消耗4.5 mW, ENOB为7.2,FOM为41 fJ/转换步长。它采用28纳米CMOS技术制造,占据0.004 mm2的有效面积。
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