Preparation and properties of high quality crystalline silicon films grown by ECR plasma deposition

S. DeBoer, V. Dalal
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引用次数: 1

Abstract

A process for growing high quality epitaxial silicon on heavily doped silicon (100) wafers at temperatures below 525/spl deg/C has been developed using a high vacuum electron cyclotron resonance (ECR) plasma deposition system. Plasma diagnostic work was done in order to optimize the growth conditions. The crystalline quality of our films has been verified using TEM, Raman and UV reflectance. Spreading resistance profiles (SRP) indicate that our undoped films are n-type with free carrier concentrations between 3/spl times/10/sup 16/ cm/sup -3/ and 3/spl times/10/sup 17/ cm/sup -3/. The junction between the heavily doped wafer and the undoped epi layer is shown to be abrupt. The mobilities of the carriers were measured using Hall measurements, and were found to be as high as in the best crystalline materials. This new technique may have significant applications for low cost Si solar cells.
ECR等离子沉积制备高质量晶体硅薄膜及其性能研究
利用高真空电子回旋共振(ECR)等离子体沉积系统,在525/spl℃以下的温度下,在重掺杂硅(100)晶片上生长高质量外延硅。为了优化生长条件,进行了血浆诊断工作。我们的薄膜的结晶质量已经用TEM,拉曼和紫外反射率进行了验证。扩散电阻谱(SRP)表明,我们的未掺杂薄膜为n型,自由载流子浓度在3/spl倍/10/sup 16/ cm/sup -3/和3/spl倍/10/sup 17/ cm/sup -3/之间。重掺杂的晶片和未掺杂的外延层之间的结是突然的。利用霍尔测量法测量了载流子的迁移率,发现其迁移率与最好的晶体材料一样高。这项新技术可能在低成本硅太阳能电池中有重要的应用。
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