Influence of piezoelectricity, doping and magnetostatic field on Brillouin amplification in compound (AIIIBV and AIIBVI) semiconductors

IF 2.9 4区物理与天体物理 Q2 OPTICS

Journal of Nonlinear Optical Physics & Materials Pub Date : 2021-11-08 DOI:10.1142/s0218863521500107

Arun Kumar, S. Dahiya, Navneet Singh, Manjeet Singh

{"title":"Influence of piezoelectricity, doping and magnetostatic field on Brillouin amplification in compound (AIIIBV and AIIBVI) semiconductors","authors":"Arun Kumar, S. Dahiya, Navneet Singh, Manjeet Singh","doi":"10.1142/s0218863521500107","DOIUrl":null,"url":null,"abstract":"A theoretical formulation followed by numerical analysis describing Brillouin amplification in compound (AIIIBV and AIIBVI) semiconductors is explored. The threshold condition for the onset of Brillouin amplification is determined. Well above the threshold intensity, the influence of piezoelectricity, doping concentration, and external magnetostatic field on the parameters characterizing Brillouin amplification viz. Brillouin amplification coefficient, transmitted intensity of Brillouin-scattered Stokes mode (BSSM), and Brillouin cell efficiency of the Brillouin cell isestimated. Numerical analysis is made for three different Brillouin cells consisting of [Formula: see text]-InSb, [Formula: see text]-GaAs, and [Formula: see text]-CdS, at 77[Formula: see text]K duly irradiated by a pulsed CO2 laser. Efforts are directed towards to determine appropriate values of doping concentration and magnetostatic field to enhance the parameters characterizing Brillouin amplification, at lower excitation intensity, and to establish the suitability of compound semiconductors as hosts for fabrication of efficient Brillouin amplifiers.","PeriodicalId":16520,"journal":{"name":"Journal of Nonlinear Optical Physics & Materials","volume":"1 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2021-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nonlinear Optical Physics & Materials","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1142/s0218863521500107","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}

引用次数: 1

Abstract

A theoretical formulation followed by numerical analysis describing Brillouin amplification in compound (AIIIBV and AIIBVI) semiconductors is explored. The threshold condition for the onset of Brillouin amplification is determined. Well above the threshold intensity, the influence of piezoelectricity, doping concentration, and external magnetostatic field on the parameters characterizing Brillouin amplification viz. Brillouin amplification coefficient, transmitted intensity of Brillouin-scattered Stokes mode (BSSM), and Brillouin cell efficiency of the Brillouin cell isestimated. Numerical analysis is made for three different Brillouin cells consisting of [Formula: see text]-InSb, [Formula: see text]-GaAs, and [Formula: see text]-CdS, at 77[Formula: see text]K duly irradiated by a pulsed CO2 laser. Efforts are directed towards to determine appropriate values of doping concentration and magnetostatic field to enhance the parameters characterizing Brillouin amplification, at lower excitation intensity, and to establish the suitability of compound semiconductors as hosts for fabrication of efficient Brillouin amplifiers.

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压电、掺杂和静磁场对复合(AIIIBV和AIIBVI)半导体布里渊放大的影响

探讨了复合(AIIIBV和AIIBVI)半导体中布里渊放大的理论公式和数值分析。确定了布里渊放大发生的阈值条件。在阈值强度以上，估计了压电性、掺杂浓度和外部静磁场对表征布里渊放大的参数的影响，即布里渊放大系数、布里渊散射斯托克斯模式(BSSM)的透射强度和布里渊电池效率。对三种不同的布里渊细胞进行了数值分析，这些细胞由[公式:见文]-InSb，[公式:见文]-GaAs和[公式:见文]-CdS组成，在77[公式:见文]K下适当地经脉冲CO2激光照射。努力的方向是确定适当的掺杂浓度和静磁场值，以提高在较低激发强度下表征布里渊放大的参数，并确定化合物半导体作为制造高效布里渊放大器的基质的适用性。

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来源期刊

Journal of Nonlinear Optical Physics & Materials 物理-光学

CiteScore

3.00

自引率

48.10%

发文量

审稿时长

3 months

期刊介绍： This journal is devoted to the rapidly advancing research and development in the field of nonlinear interactions of light with matter. Topics of interest include, but are not limited to, nonlinear optical materials, metamaterials and plasmonics, nano-photonic structures, stimulated scatterings, harmonic generations, wave mixing, real time holography, guided waves and solitons, bistabilities, instabilities and nonlinear dynamics, and their applications in laser and coherent lightwave amplification, guiding, switching, modulation, communication and information processing. Original papers, comprehensive reviews and rapid communications reporting original theories and observations are sought for in these and related areas. This journal will also publish proceedings of important international meetings and workshops. It is intended for graduate students, scientists and researchers in academic, industrial and government research institutions.