Breaking voltage–bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes

P. Kharel, C. Reimer, K. Luke, Lingyan He, Mian Zhang
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引用次数: 83

Abstract

Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with 1.8-dB roll-off at 50 GHz. This demonstration represents a significant improvement in voltage-bandwidth limit, one that is comparable to that achieved when switching from legacy bulk to thin-film lithium niobate modulators. Leveraging the low-loss electrode geometry, we show that sub-volt modulators with $>$ 100 GHz bandwidth can be enabled.
利用微结构电极打破集成铌酸锂调制器的电压带宽限制
具有低电压和大带宽的电光调制器在模拟和数字通信中都是至关重要的。最近,薄膜铌酸锂调制器在保持高带宽的同时降低了所需的调制电压,从而显著提高了性能。然而,这种调制器中减少的电极间隙会导致更高的微波损耗,从而限制了高频下的电光性能。在这里,我们克服了这一限制,实现了1.3 V低射频半波电压的创纪录组合,同时在50 GHz下保持1.8 db滚降的电光响应。该演示在电压带宽限制方面取得了重大进步,与从传统的大块铌酸锂调制器切换到薄膜铌酸锂调制器时所取得的成就相当。利用低损耗电极几何结构,我们证明可以启用带宽> 100 GHz的亚伏特调制器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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