{"title":"Two fast photodiodes for use in pulse radiolysis","authors":"G.G. Teather, N.V. Klassen, H.A. Gillis","doi":"10.1016/0020-7055(76)90011-5","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper we describe the characteristics of two photodiodes which make them very useful for pulse radiolysis studies. These detectors are the EG & G SHS-100 Si photodiode and the Barnes room temperature A-100 InAs photodiode. The former has a linear output up to at least 6·5 mA, has a 0–98% response time ≌ 15 ns and is distinguished from Si photodiodes previously described by having no detectable slow component to its response. The 0–98% response time of the A-100 photodiode and the circuit developed for it is about 60 ns, and it also shows no detectable slow response component. The output of the A-100 is linear up to at least 2 mA, and we have used it for absorption measurements between 450 and 3200 nm.</p></div>","PeriodicalId":100688,"journal":{"name":"International Journal for Radiation Physics and Chemistry","volume":"8 4","pages":"Pages 477-481"},"PeriodicalIF":0.0000,"publicationDate":"1976-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-7055(76)90011-5","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal for Radiation Physics and Chemistry","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0020705576900115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
In this paper we describe the characteristics of two photodiodes which make them very useful for pulse radiolysis studies. These detectors are the EG & G SHS-100 Si photodiode and the Barnes room temperature A-100 InAs photodiode. The former has a linear output up to at least 6·5 mA, has a 0–98% response time ≌ 15 ns and is distinguished from Si photodiodes previously described by having no detectable slow component to its response. The 0–98% response time of the A-100 photodiode and the circuit developed for it is about 60 ns, and it also shows no detectable slow response component. The output of the A-100 is linear up to at least 2 mA, and we have used it for absorption measurements between 450 and 3200 nm.