Shallow implanted layers in advanced silicon devices

Abstract

The fabrication and properties of ion implanted shallow layers <250 Å thick are outlined in the context of future devices where scaling down of device dimensions will require the formation of thin layers, if there is not to be a deterioration in device performance. It is shown, furthermore, that the high solubility of the common dopants that can be obtained using ion implantation enables high fields to be produced in silicon leading to abrupt changes in potential over interatomic distances. The application of these thin layers in hot electron devices leads to a number of novel device concepts including Schottky barrier height control, the formation of majority carrier diodes in the bulk of silicon, and the fabrication of monolithic hot electron transistors.