Comparing PVD Titanium Nitride Film Properties and their Effect on Beyond 7 nm EUV Patterning

S. DeVries, E. D. De Silva, D. Canaperi, A. Simon, A. A. de la peña, Wei Wang, J. Maniscalco, Luciana Meli, B. Mendoza
{"title":"Comparing PVD Titanium Nitride Film Properties and their Effect on Beyond 7 nm EUV Patterning","authors":"S. DeVries, E. D. De Silva, D. Canaperi, A. Simon, A. A. de la peña, Wei Wang, J. Maniscalco, Luciana Meli, B. Mendoza","doi":"10.1109/ASMC49169.2020.9185256","DOIUrl":null,"url":null,"abstract":"Two sources of physical vapor deposition (PVD) titanium nitride (TiN) are compared for beyond 7 nm extreme ultraviolet (EUV) single expose patterning applications. The film density, stress, and grain size affect etch characteristics and refractive index affects lithography and overlay. It was learned that tuning and controlling the film characteristics using radio frequency physical vapor deposition (RFPVD) is critical to patterning applications beyond the 7 nm node.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"5 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185256","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Two sources of physical vapor deposition (PVD) titanium nitride (TiN) are compared for beyond 7 nm extreme ultraviolet (EUV) single expose patterning applications. The film density, stress, and grain size affect etch characteristics and refractive index affects lithography and overlay. It was learned that tuning and controlling the film characteristics using radio frequency physical vapor deposition (RFPVD) is critical to patterning applications beyond the 7 nm node.
比较PVD氮化钛薄膜性能及其对超7nm EUV图像化的影响
比较了两种物理气相沉积(PVD)氮化钛(TiN)在超过7 nm极紫外(EUV)单曝光图案化应用中的应用。薄膜密度、应力和晶粒尺寸影响蚀刻特性,折射率影响光刻和覆盖。据了解,使用射频物理气相沉积(RFPVD)来调整和控制薄膜特性对于7nm以上节点的图图化应用至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信