Stress optimization study about heterogeneous multi-chip structure in Fan-out Wafer Level Package Young-in, Republic of Korea

Cheong-Ha Jung, Won Seo, Gu-sung Kim
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Abstract

The IEEE Heterogeneous Integration Roadmap Symposium, held in 2018, emphasized the importance of integrating diverse components into a SiP and presented the challenges for SiP reliability. One of the problems in the reliability is a CTE(Coefficient of Thermal Expansion) mismatch between various CTE of heterogeneous materials. This mismatch issue can easily understand when we analysis a warpage in the package structure. Unlike traditional packages, FOWLP has the advantage that the substrate can be removed to achieve a thinner thickness and the thermal and electrical properties are superior to conventional packages. However, it is vulnerable to warpage due to its thin thickness and there is a problem with reliability due to cracks caused by the stress concentration of the solderball. So, to perform SiP multi-chip package with FOWLP, it is necessary to study stress-induced optimization. And we will study this through computer simulations and present guidelines.In this paper, we present an optimization solution by performing the stress analysis with the package area effect of the multi-chip FOWLP structure. In the analysis, the finite element modeling was performed on a 20X20 mm2 package approximately 200,000 elements and 90,000 nodes, simulating the Post Mold Cure of FOWLP. Because of changing the chip size, height and package / chip area ratio in order to understand the effect of the multi-chip on the package, it was confirmed that the larger the size difference among the multi chips in the package, the larger the warpage occurs. as the size of the chip became larger, the stress distribution became larger at the edge of the chip, and it was also confirmed that the larger the height difference between the multi chips, the larger the warpage occurred.
扇出晶圆级封装中异质多芯片结构的应力优化研究
2018年举行的IEEE异构集成路线图研讨会强调了将不同组件集成到SiP中的重要性,并提出了SiP可靠性面临的挑战。非均质材料的热膨胀系数(CTE)不匹配是影响可靠性的主要问题之一。当我们分析包结构中的翘曲时,可以很容易地理解这种不匹配问题。与传统封装不同,FOWLP的优点是可以去除基板以实现更薄的厚度,并且热学和电学性能优于传统封装。然而,由于其厚度薄,它很容易变形,并且由于焊球的应力集中引起的裂纹,存在可靠性问题。因此,为了实现基于FOWLP的SiP多芯片封装,有必要进行应力诱导优化研究。我们将通过计算机模拟来研究这个问题,并提出指导方针。本文通过对多芯片FOWLP结构的封装面积效应进行应力分析,提出了一种优化方案。在分析中,对一个20 × 20 mm2的约20万个元件和9万个节点的封装进行了有限元建模,模拟了FOWLP的模后固化过程。为了了解多芯片对封装的影响,通过改变芯片尺寸、高度和封装/芯片面积比,证实了封装中多芯片之间的尺寸差异越大,翘曲就越大。随着芯片尺寸的增大,芯片边缘处的应力分布也随之增大,同时也证实了多芯片之间的高度差越大,发生翘曲的程度也越大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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