Optimization of the Electrical Characteristics of Cadmium Telluride Based Thin Layer Solar Cell According to Thickness and Gap Energy

E. Ndiaye, S. Seck, M. Fall, S. Charvet
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Abstract

In the quest for better photovoltaic performance, we simulated the CdTe-based thin film solar cell in ITO/CdS/CdTe/Mo structure with SCAPS (Solar Cell Capacitance Simulator). SCAPS model makes possible to study the effect of the thickness of layers and the gap energy (Eg) of each layer (CdTe, CdS and ITO) on the electrical characteristics of outputs such as open-circuit voltage (Voc), short-circuit current density (Jsc), Form Factor (FF) and efficiency (&eta) of the cell. The results of the simulations were in good agreement with those of the literature and revealed that increasing the thickness of the ITO window layer and of the CdS buffer cell layer reduces the photovoltaic efficiency. Conversely, the conversion rate increases with the thickness of the CdTe absorbent layer. The optimized values of layer thicknesses and energy gap of the absorber layer of the CdTe solar cell provide good photovoltaic performance with an optimal efficiency of 22%.
基于厚度和间隙能的碲化镉基薄层太阳能电池电特性优化
为了寻求更好的光伏性能,我们利用SCAPS (solar cell电容模拟器)模拟了ITO/CdS/CdTe/Mo结构的CdTe基薄膜太阳能电池。SCAPS模型可以研究层的厚度和每层(CdTe、CdS和ITO)的间隙能(Eg)对输出电特性的影响,如开路电压(Voc)、短路电流密度(Jsc)、形状因子(FF)和电池效率(&eta)。模拟结果与文献结果吻合较好,表明增大ITO窗口层和CdS缓冲电池层厚度会降低光伏效率。相反,转化率随CdTe吸收层厚度的增加而增加。CdTe太阳能电池吸收层厚度和能隙的优化值提供了良好的光伏性能,最优效率为22%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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