TiN/GaN Metal/Semiconductor Multilayers for Thermionic Energy Conversion

V. Rawat, T. Sands
{"title":"TiN/GaN Metal/Semiconductor Multilayers for Thermionic Energy Conversion","authors":"V. Rawat, T. Sands","doi":"10.1201/9780429187469-17","DOIUrl":null,"url":null,"abstract":"TiN-GaN multilayers were grown for potential application as solid-state thermionic direct energy conversion devices using reactive pulsed laser deposition in an ammonia ambient. The crystallographic analysis of the multilayers by high-resolution x-ray diffraction and crosssectional TEM revealed that, despite the difference in crystal structures of TiN and GaN, it was possible to grow thick uniaxially textured columnar-grained multilayers. Inplane electronic transport was assessed using Hall effect and Seebeck coefficient measurements. Thermal conductivity measurements have shown that by increasing the interface density, the cross-plane thermal conductivity of the multilayers can be reduced to 3.6 W/m-K, compared to 135 W/mK for bulk GaN and 38 W/mK for bulk TiN.","PeriodicalId":6429,"journal":{"name":"2007 Cleantech Conference and Trade Show Cleantech 2007","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Cleantech Conference and Trade Show Cleantech 2007","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/9780429187469-17","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

TiN-GaN multilayers were grown for potential application as solid-state thermionic direct energy conversion devices using reactive pulsed laser deposition in an ammonia ambient. The crystallographic analysis of the multilayers by high-resolution x-ray diffraction and crosssectional TEM revealed that, despite the difference in crystal structures of TiN and GaN, it was possible to grow thick uniaxially textured columnar-grained multilayers. Inplane electronic transport was assessed using Hall effect and Seebeck coefficient measurements. Thermal conductivity measurements have shown that by increasing the interface density, the cross-plane thermal conductivity of the multilayers can be reduced to 3.6 W/m-K, compared to 135 W/mK for bulk GaN and 38 W/mK for bulk TiN.
用于热电子能量转换的TiN/GaN金属/半导体多层材料
利用反应脉冲激光在氨环境中沉积TiN-GaN多层膜作为固态热离子直接能量转换器件。利用高分辨率x射线衍射和横截面透射电镜对多层膜进行晶体学分析表明,尽管TiN和GaN的晶体结构不同,但仍有可能生长出厚的单轴织构柱状晶粒多层膜。利用霍尔效应和塞贝克系数测量评估平面内电子输运。热导率测量表明,通过增加界面密度,多层膜的平面热导率可以降低到3.6 W/m-K,相比之下,大块GaN为135 W/mK,大块TiN为38 W/mK。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信